70 GHz InGaAs metal-semiconductor-metal photodetectors for polarisation-insensitive operation

被引：10

作者：

Droge, E

Bottcher, EH

Bimberg, D

Reimann, O

Steingruber, R

机构：

[1] Tech Univ Berlin, Inst Festkorperphys 1, D-10623 Berlin, Germany

[2] Tech Univ Brandenburg, Dept Electromagnet Theory, D-03044 Cottbus, Germany

[3] Heinrich Hertz Inst Nachrichtentech Berlin GmbH, D-10587 Berlin, Germany

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 14期

关键词：

D O I：

10.1049/el:19980992

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InGaAs metal-semiconductor-metal photodetectors with 0.21 mu m feature size finger electrodes have been fabricated. A pulse response lime of 3.8ps for 1.55 mu m light was measured by means of electro-optical sampling. A 3dB bandwidth of 70GHz was extracted from the time domain data. Polarisation-insensitive operation under front illumination was obtained by employing semicircular-type finger electrodes for the photodetectors with a 14 mu m diameter active area.

引用

页码：1421 / 1422

页数：2

共 6 条

[1] Polarisation-insensitive high-speed InGaAs metal-semiconductor-metal photodetectors [J].