Heterojunction band offsets and Schottky-barrier heights: Tersoff's theory in the presence of strain

被引：21

作者：

Ohler, C ^{[1
]}

Daniels, C ^{[1
]}

Forster, A ^{[1
]}

Luth, H ^{[1
]}

机构：

[1] Forschungszentrum Julich, Inst Schicht & Ionentech, D-52425 Julich, Germany

来源：

PHYSICAL REVIEW B | 1998年 / 58卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.58.7864

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have extended the interface dipole theory on heterojunction band offsets and Schottky-barrier heights as formulated by Tersoff [Phys. Rev. Lett. 52. 465 (1984), Phys. Rev. B 30, 4874 (1984)] to the case of strain. Every particular strain state of a single semiconductor crystal is ascribed a definite charge neutrality level (CNL) This is done by calculating the deformation potential of the band edges relative to the CNL. Band offsets result upon aligning two CNL's. By aligning the CNL and the Fermi level of a metal, the barrier height at a Schottky contact to a strained semiconductor layer can be predicted. Examples created are (100) heterojunctions with Si, Ge, GaAs, InAs, AlAs, and InP. [S0163-1829(98)08936-X].

引用

页码：7864 / 7871

页数：8

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