Repulsive exciton-exciton interaction in quantum dots

被引：118

作者：

Rodt, S ^{[1
]}

Heitz, R ^{[1
]}

Schliwa, A ^{[1
]}

Sellin, RL ^{[1
]}

Guffarth, F ^{[1
]}

Bimberg, D ^{[1
]}

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

来源：

PHYSICAL REVIEW B | 2003年 / 68卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.68.035331

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Biexcitons localized in single InAs/GaAs quantum dots (QD's) are investigated by cathodoluminescence, demonstrating an anticorrelation of the biexciton binding energy and the exciton transition energy. The binding energy decreases with increasing transition energy changing its sign at about 1.24 eV. The "binding" to "antibinding" transition is attributed to three-dimensional confinement, quenching correlation, and exchange and causing local charge separation. Model calculations of the biexciton in truncated InAs/GaAs QD's demonstrate the observed trend to result from the decreasing number of localized excited states with decreasing QD size. The interaction with resonant states in the wetting layer is found to be negligible.

引用

页数：5

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