Fe-catalytic growth of ZnSe nanowires on a ZnSe(001) surface at low temperatures by molecular-beam epitaxy

被引：24

作者：

Ohno, Y

Shirahama, T

Takeda, S

Ishizumi, A

Kanemitsu, Y

机构：

[1] Osaka Univ, Grad Sch Sci, Dept Phys, Osaka 5600043, Japan

[2] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300192, Japan

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 04期

关键词：

D O I：

10.1063/1.1997275

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We grew ZnSe needle-like nanowires on a ZnSe/GaAs epilayer using Fe catalysts by means of molecular-beam epitaxy operated at low temperatures of 250-350 degrees C, which are comparable to the usual temperatures for fabrication of ZnSe-based optoelectronic devices. The diameters at the tops of the nanowires ranged from 8 to 20 nm, and the typical length was about 200 nm. The number density of the nanowires was the order of 10(9) cm(-2). A nanowire was the zinc blende structure and the longitudinal direction was < 001 >,< 111 >,< 110 >, or < 112 >. Photoluminescence spectroscopy implied that the optical property of the nanowires differs from that of the bulk crystals. (c) 2005 American Institute of Physics.

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