The SCALPEL Proof of Concept System

被引：8

作者：

Harriott, LR

Berger, SD

Biddick, C

Blakey, MI

Bowler, SW

Brady, K

Camarda, RM

Connelly, WF

Crorken, A

Custy, J

DeMarco, R

Farrow, RC

Felker, JA

Fetter, L

Freeman, R

Hopkins, L

Huggins, HA

Knurek, CS

Kraus, JS

Liddle, JA

Mkrtychan, M

Novembre, AE

Peabody, ML

Tarascon, RG

Wade, HH

Waskiewicz, WK

Watson, GP

Werder, KS

Windt, D

机构：

[1] Bell Labs. - Lucent Technology, Murray Hill

[2] Integrated Solutions Inc., Tewksbury

来源：

MICROELECTRONIC ENGINEERING | 1997年 / 35卷 / 1-4期

关键词：

D O I：

10.1016/S0167-9317(96)00189-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have designed and constructed a projection electron beam lithography system based on the SCALPEL (SCattering with Angular Limitation in Projection Electron beam Lithography) principle. The experimental tool was built to analyze the efficacy of this approach as an alternative to photolithography for future integrated circuit manufacturing. In this paper we will describe the design of the system and show preliminary results of test pattern exposures. We will show printed features down to 0.08 mu m as well as lithographic properties, such as depth of focus, which has been measured at 75 mu m for 0.25 mu m lines and spaces.

引用

页码：477 / 480

页数：4

共 12 条

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[10] LITHOGRAPHIC PERFORMANCE OF A NEGATIVE RESIST UNDER SCATTERING WITH ANGULAR LIMITATION FOR PROJECTION ELECTRON LITHOGRAPHY EXPOSURE AT 100 KEV [J].

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