Nitrogen engineering of ultrathin oxynitrides by a thermal NO/O2/NO process

被引：46

作者：

Gusev, EP ^{[1
]}

Lu, HC

Garfunkel, E

Gustafsson, T

Green, ML

Brasen, D

Lennard, WN

机构：

[1] Rutgers State Univ, Dept Phys, Piscataway, NJ 08854 USA

[2] Rutgers State Univ, Dept Chem, Piscataway, NJ 08854 USA

[3] Rutgers State Univ, Lab Surface Modificat, Piscataway, NJ 08854 USA

[4] Lucent Technol, Bell Labs, Murray Hill, NJ 07974 USA

[5] Univ Western Ontario, Interface Sci Western, London, ON, Canada

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 84卷 / 05期

关键词：

D O I：

10.1063/1.368435

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The paper discusses nitrogen engineering of ultrathin (<5 nm) oxynitride gate dielectrics. The dielectric film that we have aimed for has two nitrogen enhanced layers: one at the SiO2/polysilicon interface to retard boron diffusion from the gate, and a smaller one peaked at the Si/SiO2 interface to increase the hot electron degradation resistance. We were able to produce this dielectric by a thermal (NO/O-2/NO) process, aided by an understanding of the kinetics and thermodynamics of nitrogen incorporation in SiO2. (C) 1998 American Institute of Physics. [S0021-8979(98)06517-7].

引用

页码：2980 / 2982

页数：3

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