Preparation and evaluation of LaNiO3 thin film electrode with chemical solution deposition

被引：74

作者：

Miyazaki, H

Goto, T

Miwa, Y

Ohno, T

Suzuki, H

Ota, T

Takahashi, M

机构：

[1] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] Nagoya Inst Technol, Ceram Res Lab, Gifu 5070071, Japan

[3] Shizuoka Univ, Fac Engn, Dept Mat Sci, Hamamatsu, Shizuoka 4328561, Japan

来源：

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 2004年 / 24卷 / 06期

关键词：

chemical solution deposition; electrical conductivity; LaNiO3; perovskite;

D O I：

10.1016/S0955-2219(03)00382-0

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

LaNiO3 (LNO) thin films were prepared onto Si substrate by chemical solution deposition. The orientation of the LNO films was controlled by changing concentration of precursor solution. The resistivity of the resultant LNO films was 1.82 - 2.57 x 10(-3) Omega cm. The obtained 0.3 M-LNO film was flat surface, highly (100) orientation, and had a low resistivity of 1.85 x 10(-3) Omega cm. PbZr0.53Ti0.47O3 was fabricated onto the resultant 0.3 M-LNO electrode, and the sample showed a good ferroelectric property. (C) 2003 Elsevier Ltd. All rights reserved.

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页码：1005 / 1008

页数：4

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