Field emission properties of BN coated Si tips by pulsed ArF laser deposition

被引：11

作者：

Jayatissa, AH ^{[1
]}

Sato, F

Saito, N

Sawada, K

Masuda, T

Nakanishi, Y

机构：

[1] NHK Japan Broadcasting Corp, Res Labs, Imaging Res Div, Setagaya Ku, Tokyo 157, Japan

[2] NHK Japan Broadcasting Corp, Res Labs, Display Res Div, Setagaya Ku, Tokyo 157, Japan

[3] Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 432, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1999年 / 17卷 / 01期

关键词：

D O I：

10.1116/1.590505

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin films of boron nitride (BN) were deposited by pulsed ArF laser ablation of a pyrolitic BN target in an N-2 ambient with and without substrate bias and also in a nitrogen plasma. The structural property studies with infrared and reflection high-energy electron diffraction show that the films possess cubic BN and hexagonal or amorphous phase of BN. Deposition of cubic BN is enhanced by application of substrate bias whereas crystallinity is degraded by the introduction of nitrogen plasma. The held emission of electrons was tested for BN coated Si tips, and it was found that the field emission of electrons enhanced when the cubic BN was coated. (C) 1999 American Vacuum Society. [S0734-211X(99)03901-3].

引用

页码：237 / 240

页数：4

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