Low-Phase-Noise Graphene FETs in Ambipolar RF Applications

被引：70

作者：

Moon, J. S. ^{[1
]}

Curtis, D. ^{[1
]}

Zehnder, D. ^{[1
]}

Kim, S. ^{[1
]}

Gaskill, D. K. ^{[2
]}

Jernigan, G. G. ^{[2
]}

Myers-Ward, R. L. ^{[2
]}

Eddy, C. R., Jr. ^{[2
]}

Campbell, P. M. ^{[2
]}

Lee, K. -M. ^{[3
]}

Asbeck, P. ^{[3
]}

机构：

[1] HRL Labs LLC, Malibu, CA 90265 USA

[2] USN, Res Labs, Washington, DC 20375 USA

[3] Univ Calif San Diego, La Jolla, CA 92093 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 03期

关键词：

Field-effect transistor (FET); frequency multiplier; graphene; mixer; phase noise; 1/f noise; TRANSISTORS;

D O I：

10.1109/LED.2010.2100074

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we present both the 1/f noise and phase noise performance of top-gated epitaxial graphene field-effect transistors (FETs) in nonlinear circuit applications for the first time. In the case of frequency doublers, the fundamental signal is suppressed by 25 dB below the second harmonic signal. With a phase noise of -110 dBc/Hz measured at a 10-kHz offset, a carrier-to-noise degradation (Delta CNR) of 6 dB was measured for the frequency doubler. This implies noiseless frequency multiplication without additional 1/f noise upconversion during the nonlinear process. The frequency multiplication was demonstrated above the gigahertz range. The 1/f noise of top-gated epitaxial graphene FETs is comparable or lower than that of exfoliated graphene FETs.

引用

页码：270 / 272

页数：3

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