Low-frequency electronic noise in the double-gate single-layer graphene transistors

被引：120

作者：

Liu, G. ^{[1
,2
]}

Stillman, W. ^{[3
,4
]}

Rumyantsev, S. ^{[3
,4
,5
]}

Shao, Q. ^{[1
,2
,6
]}

Shur, M. ^{[3
,4
]}

Balandin, A. A. ^{[1
,2
]}

机构：

[1] Univ Calif Riverside, Bourns Coll Engn, Nanodevice Lab, Dept Elect Engn, Riverside, CA 92521 USA

[2] Univ Calif Riverside, Bourns Coll Engn, Nanodevice Lab, Mat Sci & Engn Program, Riverside, CA 92521 USA

[3] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA

[4] Rensselaer Polytech Inst, Ctr Integrated Elect, Troy, NY 12180 USA

[5] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[6] Lawrence Livermore Natl Lab, Ctr Micro & Nano Technol, Livermore, CA 94550 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 03期

关键词：

1; f noise; flicker noise; graphene; hafnium compounds; transistors; FIELD-EFFECT TRANSISTORS; DEPENDENCE; TRANSPORT;

D O I：

10.1063/1.3180707

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors report the results of an experimental investigation of the low-frequency noise in the double-gate graphene transistors. The back-gate graphene devices were modified via addition of the top gate separated by similar to 20 nm of HfO2 from the single-layer graphene channels. The measurements revealed low flicker noise levels with the normalized noise spectral density close to 1/f (f is the frequency) and Hooge parameter alpha(H)approximate to 2x10(-3). The analysis of noise spectral density dependence on the top and bottom gate biases helped to elucidate the noise sources in these devices. The obtained results are important for graphene electronic and sensor applications.

引用

页数：3

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