Lasing mechanism of InGaN-GaN-AlGaN MQW laser diode grown on SiC by low-pressure metal-organic vapor phase epitaxy

被引：18

作者：

Domen, K ^{[1
]}

Kuramata, A ^{[1
]}

Soejima, R ^{[1
]}

Horino, K ^{[1
]}

Kubota, S ^{[1
]}

Tanahashi, T ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 24301, Japan

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 1998年 / 4卷 / 03期

关键词：

bandgap inhomogeneity; carrier recombination; carrier recombination mechanism; composition fluctuation; free carrier; free carrier recombination; optical variables measurement; photoluminescence; semiconductor lasers; spatial inhomogeneity; spontaneous emission; stimulated emission;

D O I：

10.1109/2944.704106

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We studied the lasing mechanism of an InGaN-GaN-AlGaN multiquantum-well (MQW) laser diode by making various optical characterizations on the diode. Excitation power dependence of photoluminescence (PL) intensity was obtained to investigate the carrier recombination process of the laser. Surface emission and edge emission were compared by optical pumping to clarify where the lasing lines were located in relation to the absorption continuum. From the results, we demonstrate that lasing phenomena in our laser are dominated by free carriers. PL mapping was also taken on the same laser chip to examine the incavity bandgap inhomogeneity. We found a very large bandgap scattering of 100 meV. We also found that the wavelength distribution has a periodic modulation. We clarified that the various stimulated emission lines observed in our lasers are caused by the in-cavity spatial bandgap inhomogeneity of the InGaN MQW.

引用

页码：490 / 497

页数：8

共 39 条

[1] Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters [J].