III-Nitride LEDs with photonic crystal structures

被引：25

作者：

Wierer, JJ ^{[1
]}

Krames, MR ^{[1
]}

Epler, JE ^{[1
]}

Gardner, NF ^{[1
]}

Wendt, JR ^{[1
]}

Sigalas, MM ^{[1
]}

Brueck, SRJ ^{[1
]}

Li, D ^{[1
]}

Shagam, M ^{[1
]}

机构：

[1] Lumileds Lighting, Adv Labs, San Jose, CA 95131 USA

来源：

Light-Emitting Diodes: Research, Manufacturing, and Applications IX | 2005年 / 5739卷

关键词：

III-Nitride; AlInGaN; light-emitting diode; LED; photonic crystal;

D O I：

10.1117/12.591218

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

dddElectrical operation of III-Nitride light emitting diodes (LEDs) with photonic crystal structures is demonstrated. Employing photonic crystal structures in III-Nitride LEDs is a method to increase light extraction efficiency and directionality. The photonic crystal is a triangular lattice formed by dry etching into the III-Nitride LED. A range of lattice constants is considered (a similar to 270 - 340nm). The III-Nitride LED layers include a tunnel junction providing good lateral current spreading without a semi-absorbing metal current spreader as is typically done in conventional III-Nitride LEDs. These photonic crystal III-Nitride LED structures are unique because they allow for carrier recombination and light generation proximal to the photonic crystal (light extraction area) yet displaced from the absorbing metal contact. The photonic crystal Bragg scatters what would have otherwise been guided modes out of the LED, increasing the extraction efficiency. The far-field light radiation patterns are heavily modified compared to the typical III-Nitride LED's Lambertian output. The photonic crystal affects the light propagation out of the LED surface, and the radiation pattern changes with lattice size. LEDs with photonic crystals are compared to similar III-Nitride LEDs without the photonic crystal in terms of extraction, directionality, and emission spectra.

引用

页码：102 / 107

页数：6

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