共 9 条
- [2] 1.3 μm room-temperature GaAs-based quantum-dot laser [J]. APPLIED PHYSICS LETTERS, 1998, 73 (18) : 2564 - 2566
- [3] ISHIKAWA H, 1999, SEMICONDUCT SEMIMET, V60, pCH7
- [5] Low threshold CW lasing of closely-stacked self-organized InAs/GaAs quantum dots [J]. 1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1998, : 345 - 348
- [6] NAKATA Y, 1998, 98 P INT C COMP SEM
- [7] Effect of phonon bottleneck on quantum-dot laser performance [J]. APPLIED PHYSICS LETTERS, 1997, 71 (19) : 2791 - 2793
- [8] SUGAWARA M, 1999, SEMICONDUCT SEMIMET, V60, pCH1
- [9] Negative characteristic temperature of InGaAs quantum dot injection laser [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (6B): : 4216 - 4218