Light emission spectra of columnar-shaped self-assembled InGaAs/GaAs quantum-dot lasers: Effect of homogeneous broadening of the optical gain on lasing characteristics

被引:84
作者
Sugawara, M [1 ]
Mukai, K [1 ]
Nakata, Y [1 ]
机构
[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 24301, Japan
关键词
D O I
10.1063/1.123616
中图分类号
O59 [应用物理学];
学科分类号
摘要
We examined the current-output power characteristics and light emission spectra for columnar-shaped self-assembled InGaAs quantum-dot lasers with a room temperature lasing threshold of 6 mA. Lasing threshold currents became obscure as temperature decreased below 180 K. While lasing occurred with one line including a series of longitudinal modes at room temperature, spectra at 80 K showed broad lasing emission over a range of 50-60 meV. We conclude that dots with different energies start lasing independently at low temperatures due to their spatial localization, while at room temperature the dots contribute to one-line lasing collectively via homogeneous broadening of optical gain. (C) 1999 American Institute of Physics. [S0003-6951(99)00811-6].
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收藏
页码:1561 / 1563
页数:3
相关论文
共 9 条
  • [1] Emission spectra and mode structure of InAs/GaAs self-organized quantum dot lasers
    Harris, L
    Mowbray, DJ
    Skolnick, MS
    Hopkinson, M
    Hill, G
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (07) : 969 - 971
  • [2] 1.3 μm room-temperature GaAs-based quantum-dot laser
    Huffaker, DL
    Park, G
    Zou, Z
    Shchekin, OB
    Deppe, DG
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (18) : 2564 - 2566
  • [3] ISHIKAWA H, 1999, SEMICONDUCT SEMIMET, V60, pCH7
  • [4] Lasing with low threshold current and high output power from columnar-shaped InAs/GaAs quantum dots
    Mukai, K
    Nakata, Y
    Shoji, H
    Sugawara, M
    Ohtsubo, K
    Yokoyama, N
    Ishikawa, H
    [J]. ELECTRONICS LETTERS, 1998, 34 (16) : 1588 - 1590
  • [5] Low threshold CW lasing of closely-stacked self-organized InAs/GaAs quantum dots
    Mukai, K
    Nakata, Y
    Shoji, H
    Sugawara, M
    Ohtsubo, K
    Futatsugi, T
    Sugiyama, Y
    Yokoyama, N
    Ishikawa, H
    [J]. 1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1998, : 345 - 348
  • [6] NAKATA Y, 1998, 98 P INT C COMP SEM
  • [7] Effect of phonon bottleneck on quantum-dot laser performance
    Sugawara, M
    Mukai, K
    Shoji, H
    [J]. APPLIED PHYSICS LETTERS, 1997, 71 (19) : 2791 - 2793
  • [8] SUGAWARA M, 1999, SEMICONDUCT SEMIMET, V60, pCH1
  • [9] Negative characteristic temperature of InGaAs quantum dot injection laser
    Zhukov, AE
    Ustinov, VM
    Egorov, AY
    Kovsh, AR
    Tsatsulnikov, AF
    Ledentsov, NN
    Zaitsev, SV
    Gordeev, NY
    Kopev, PS
    Alferov, ZI
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (6B): : 4216 - 4218