X-ray source combined ultrahigh-vacuum scanning tunneling microscopy for elemental analysis

被引：11

作者：

Hasegawa, Y ^{[1
]}

Tsuji, K ^{[1
]}

Nakayama, K ^{[1
]}

Wagatsuma, K ^{[1
]}

Sakurai, T ^{[1
]}

机构：

[1] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2000年 / 18卷 / 06期

关键词：

D O I：

10.1116/1.1318189

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An ultrahigh-vacuum scanning tunneling microscope (UHV-STM) combined with an x-ray source has been developed. STM samples were irradiated with an x-ray beam and an x-ray induced photoemission current was detected with the tip. By using the system, apparent height increases due to the x-ray induced current were successfully observed in STM images of Cr/Cu(111), Au/Cu(111), Si(111)7x7, and Si(111)-5x1 Au surfaces. A bias voltage applied to the tip enhances collection of the x-ray induced current and increases the apparent height. The relative height increase of the Au overlayer to the Cu substrate in the STM images of the Au/Cu(111) surface was found to depend on the x-ray irradiation, suggesting that it may be a promising tool for elemental analysis in a STM. (C) 2000 American Vacuum Society. [S0734-211X(00)03806-3].

引用

页码：2676 / 2680

页数：5

共 13 条

[1] SI(111)-5X1-AU RECONSTRUCTION AS STUDIED BY SCANNING TUNNELING MICROSCOPY [J].