Room-temperature ferromagnetism in Ge1-xMnx nanowires -: art. no. 094415

被引：67

作者：

Kazakova, O ^{[1
]}

Kulkarni, JS

Holmes, JD

Demokritov, SO

机构：

[1] Natl Phys Lab, Teddington TW11 0LW, Middx, England

[2] Univ Coll Cork, Mat Sect, Dept Chem, Cork, Ireland

[3] Univ Coll Cork, Supcrit Fluid Ctr, Dept Chem, Cork, Ireland

[4] Univ Munster, Inst Phys Appl, D-4400 Munster, Germany

来源：

PHYSICAL REVIEW B | 2005年 / 72卷 / 09期

关键词：

D O I：

10.1103/PhysRevB.72.094415

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report an observation of room temperature ferromagnetism in Ge nanowires doped with Mn. High-density arrays of Ge1-xMnx (x=1%-5%) nanowires with the smallest diameter of 35 nm have been synthesized within the pores of anodized aluminium oxide membranes using a supercritical fluid inclusion-phase technique. Structural analysis of the nanowires proved the existence of a highly crystalline germanium host lattice containing discrete manganese atoms. All of the nanowires studied displayed ferromagnetic properties at room temperature. Ferromagnetic ordering reaches a maximum at intermediate Mn concentrations. The magnetic properties of the nanowires can be understood by considering the influence of co-dopant nonmagnetic impurities and nanowire/membrane interfaces.

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共 27 条

[1] Magnetic characteristics of epitaxial Ge(Mn,Fe) diluted films -: a new room temperature magnetic semiconductor? [J].

Braak, H ;

Gareev, RR ;

Bürgler, DE ;

Schreiber, R ;

Grünberg, P ;

Schneider, CM .

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2005, 286 :46-50

[2] Ferromagnetism in Mn-doped Ge [J].

Cho, SG ;

Choi, S ;

Hong, SC ;

Kim, Y ;

Ketterson, JB ;

Kim, BJ ;

Kim, YC ;

Jung, JH .

PHYSICAL REVIEW B, 2002, 66 (03) :333031-333033

[3] Toward room temperature ferromagnetism of Ge:Mn systems [J].

D'Orazio, F ;

Lucari, F ;

Pinto, N ;

Morresi, L ;

Murri, R .

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2004, 272 :2006-2007

[4] Photoluminescence spectra and ferromagnetic properties of GaMnN nanowires [J].

Deepak, FL ;

Vanitha, PV ;

Govindaraj, A ;

Rao, CNR .

CHEMICAL PHYSICS LETTERS, 2003, 374 (3-4) :314-318

[5] Origin of high-temperature ferromagnetism in (Ga,Mn)N layers grown on 4H-SiC(0001) by reactive molecular-beam epitaxy [J].

Dhar, S ;

Brandt, O ;

Trampert, A ;

Däweritz, L ;

Friedland, KJ ;

Ploog, KH ;

Keller, J ;

Beschoten, B ;

Güntherodt, G .

APPLIED PHYSICS LETTERS, 2003, 82 (13) :2077-2079

[6] Zener model description of ferromagnetism in zinc-blende magnetic semiconductors [J].

Dietl, T ;

Ohno, H ;

Matsukura, F ;

Cibert, J ;

Ferrand, D .

SCIENCE, 2000, 287 (5455) :1019-1022

[7] Ferromagnetic Mn-doped GaN nanowires [J].

Han, DS ;

Park, J ;

Rhie, KW ;

Kim, S ;

Chang, J .

APPLIED PHYSICS LETTERS, 2005, 86 (03) :1-3

[8] Mining for high Tc ferromagnetism in ion-implanted dilute magnetic semiconductors [J].

Hebard, AF ;

Rairigh, RP ;

Kelly, JG ;

Pearton, SJ ;

Abernathy, CR ;

Chu, SNG ;

Wilson, RG .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2004, 37 (04) :511-517

[9] Supercritical fluid synthesis of metal and semiconductor nanomaterials [J].

Holmes, JD ;

Lyons, DM ;

Ziegler, KJ .

CHEMISTRY-A EUROPEAN JOURNAL, 2003, 9 (10) :2144-2150

[10] Ferromagnetic transition temperature enhancement in (Ga,Mn)As semiconductors by carbon codoping [J].

Jungwirth, T ;

Masek, J ;

Sinova, J ;

MacDonald, AH .

PHYSICAL REVIEW B, 2003, 68 (16)