Ballistic electron emission luminescence

被引：15

作者：

Appelbaum, I ^{[1
]}

Russell, KJ

Narayanamurti, V

Monsma, DJ

Marcus, CM

Hanson, MP

Gossard, AC

Temkin, H

Perry, CH

机构：

[1] MIT, Dept Phys, Cambridge, MA 02139 USA

[2] Harvard Univ, Div Engn & Appl Sci, Cambridge, MA 02138 USA

[3] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA

[4] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[5] Texas Tech Univ, Dept Elect Engn, Lubbock, TX 79409 USA

[6] Northeastern Univ, Dept Phys, Boston, MA 02115 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 25期

关键词：

D O I：

10.1063/1.1584524

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We describe the design, fabrication, and operation of a GaAs-based heterostructure device which emits band gap luminescence from solid-state tunnel-junction ballistic injection of electrons with sub-bandgap energy. We find that, due to energy conservation requirements, a collector bias exceeding a threshold determined by the Schottky barrier height and sample band gap energy must be applied for luminescence emission. The consequences of these results for a hybrid scanning-probe microscopy and spectroscopy combining both ballistic electron emission microscopy and scanning tunneling luminescence are emphasized. (C) 2003 American Institute of Physics.

引用

页码：4498 / 4500

页数：3

共 23 条

[1]

BERNDT R, 1995, SCANNING MICROSCOPY, V9, P687

[2] SURFACE STUDIES BY SCANNING TUNNELING MICROSCOPY [J].