The role of Ti interlayer in carbon nanotube growth

被引:10
作者
Chuang, Chia-Chih [2 ]
Liu, Wei-Long [1 ]
Chen, Wen-Jauh [1 ]
Huang, Jin-Hua [3 ]
机构
[1] Natl Formosa Univ, Dept Mat Sci & Engn, Huwei 632, Taiwan
[2] Photovoltaics Technol Ctr, Ind Technol Res Inst, Hsinchu 310, Taiwan
[3] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
关键词
carbon nanotube (CNT); Ti interlayer; thermal chemical vapor deposition (TCVD); growth mechanism;
D O I
10.1016/j.surfcoat.2007.08.069
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Vertically aligned multi-wall carbon nanotubes (CNTs) were grown on Ni/Ti/Si substrate by thermal chemical vapor deposition method in a microwave heating system. The results showed that vertically aligned CNTs could be uniformly grown on a large area substrate of 3 inch diameter. The Ti interlayer couldn't obstruct the interdiffusion of Ni and Si and the inward diffusion of O, Ti and C. The C atoms for CNTs growth were supplied from Ni particles at an early stage and from Ti interlayer at a later stage in the growth process. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:2121 / 2125
页数:5
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