REMOVAL OF END-OF-RANGE DEFECTS IN BF2+ IMPLANTED (111)SI BY THE GRAIN-GROWTH OF THIN NISI2 OVERLAYER

A significant reduction in the density of end-of-range (EOR) defects was achieved in BF2+ implanted (111)Si by the formation and growth of a polycrystalline NiSi2 overlayer in samples annealed at 850-900-degrees-C. In contrast, no apparent reduction in the density of EOR defects was found in BF2+ implanted silicon with no NiSi2 layer or with an epitaxial NiSi2 overlayer, subject d to the same heat treatment. The significant reduction in density of the EOR defects was correlated to the grain growth of thin polycrystalline NiSi2 overlayer. The availiabilty of both crystalline and epitaxial NiSi2 on BF2+ implanted (111)Si made a direct comparison of the effects of different structures of the same silicide on the removal of the EOR defects possible.