EFFECTS OF SILICIDE FORMATION ON THE REMOVAL OF END-OF-RANGE ION-IMPLANTATION DAMAGE IN SILICON

被引：16

作者：

LUR, W

CHENG, JY

CHU, CH

WANG, MH

LEE, TC

WANN, YJ

CHAO, WY

CHEN, LJ

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1989年 / 39卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(89)90791-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：297 / 301

页数：5

共 10 条

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[9] DEFECT ANNIHILATION IN SHALLOW P+ JUNCTIONS USING TITANIUM SILICIDE [J].

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[10] BORON, FLUORINE, AND CARRIER PROFILES FOR B AND BF2 IMPLANTS INTO CRYSTALLINE AND AMORPHOUS SI [J].

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