Controlling the diameter, growth rate, and density of vertically aligned carbon nanotubes synthesized by microwave plasma-enhanced chemical vapor deposition

被引:251
作者
Choi, YC
Shin, YM
Lee, YH [1 ]
Lee, BS
Park, GS
Choi, WB
Lee, NS
Kim, JM
机构
[1] Jeonbuk Natl Univ, Dept Semicond Sci & Technol, Jeonju 562756, South Korea
[2] Jeonbuk Natl Univ, Semicond Phys Res Ctr, Jeonju 562756, South Korea
[3] Samsung Adv Inst Technol, Analyt Engn Lab, Suwon 440600, South Korea
[4] Samsung Adv Inst Technol, Display Lab, Suwon 440600, South Korea
[5] Jeonbuk Natl Univ, Dept Phys, Jeonju 562756, South Korea
[6] Jeonbuk Natl Univ, Div Adv Mat Engn, Jeonju 562756, South Korea
关键词
D O I
10.1063/1.126348
中图分类号
O59 [应用物理学];
学科分类号
摘要
Vertically aligned carbon nanotubes were synthesized on Ni-deposited Si substrates using microwave plasma-enhanced chemical vapor deposition. The grain size of Ni thin films varied with the rf power density during the rf magnetron sputtering process. We found that the diameter, growth rate, and density of carbon nanotubes could be controlled systematically by the grain size of Ni thin films. With decreasing the grain size of Ni thin films, the diameter of the nanotubes decreased, whereas the growth rate and density increased. High-resolution transmission electron microscope images clearly demonstrated synthesized nanotubes to be multiwalled. (C) 2000 American Institute of Physics. [S0003-6951(00)05317-1].
引用
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页码:2367 / 2369
页数:3
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