Anisotropic interfacial strain in InP/InGaAs/InP quantum wells

被引：5

作者：

Lakshmi, B ^{[1
]}

Cassidy, DT ^{[1
]}

Robinson, BJ ^{[1
]}

机构：

[1] McMaster Univ, Dept Engn Phys, Hamilton, ON L8S 4L7, Canada

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 84卷 / 10期

关键词：

D O I：

10.1063/1.368839

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Numerical simulations based on a valence force field model have been performed to explain experimental results on the degree of polarization of photoluminescence from the [001] direction of InP/InGaAs/InP quantum wells grown on (001) substrates by gas-source molecular beam epitaxy. The results of the simulations indicate an anisotropic strain field owing to fundamental, growth-related differences between the interfaces of the quantum well. The anisotropic strain field is associated with strained Ga-P, Ga-As, and In-As bonds at the InP/InGaAs/InP interfaces. The results of the simulations are in agreement with measurements of the degree of polarization of photoluminescence from the [001] direction of the quantum wells. (C) 1998 American Institute of Physics. [S0021-8979(98)06822-4]

引用

页码：5739 / 5742

页数：4

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