AS CAPTURE AND THE GROWTH OF ULTRATHIN INAS LAYERS ON INP

被引：15

作者：

ASPNES, DE

TAMARGO, MC

BRASIL, MJSP

机构：

[1] UNICAMP,IFGW,BR-13081 CAMPINAS,SP,BRAZIL

[2] CUNY CITY COLL,DEPT CHEM,NEW YORK,NY 10031

[3] BELLCORE,RED BANK,NJ 07701

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 24期

关键词：

D O I：

10.1063/1.111309

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Capture of As by (001) InP surfaces exposed to As fluxes under chemical beam epitaxy conditions is investigated by virtual-interface analysis of real-time kinetic ellipsometric data. Intentional growth of ultrathin InAs layers is readily followed. Arsenic accumulated in the absence of growth can be completely removed by exposure to P, showing that As-P exchange occurs only in the outermost layer.

引用

收藏

页码：3279 / 3281

页数：3

相关论文

共 16 条

[1] IMPROVEMENT OF INP/INGAAS HETEROINTERFACES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY [J].

ANAN, T ;

SUGOU, S ;

NISHI, K .

APPLIED PHYSICS LETTERS, 1993, 63 (08) :1047-1049

[2] HIGH PRECISION SCANNING ELLIPSOMETER [J].

ASPNES, DE ;

STUDNA, AA .

APPLIED OPTICS, 1975, 14 (01) :220-228

[3] MINIMAL-DATA APPROACHES FOR DETERMINING OUTER-LAYER DIELECTRIC RESPONSES OF FILMS FROM KINETIC REFLECTOMETRIC AND ELLIPSOMETRIC MEASUREMENTS [J].

ASPNES, DE .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA A-OPTICS IMAGE SCIENCE AND VISION, 1993, 10 (05) :974-983

[4] METHODS FOR DRIFT STABILIZATION AND PHOTOMULTIPLIER LINEARIZATION FOR PHOTOMETRIC ELLIPSOMETERS AND POLARIMETERS [J].

ASPNES, DE ;

STUDNA, AA .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1978, 49 (03) :291-297

[5] OXIDE DESORPTION FROM INP UNDER STABILIZING PRESSURES OF P2 OR AS4 [J].

AVERBECK, R ;

RIECHERT, H ;

SCHLOTTERER, H ;

WEIMANN, G .

APPLIED PHYSICS LETTERS, 1991, 59 (14) :1732-1734

[6] ROUGHNESS AT THE INTERFACE OF THIN INP/INAS QUANTUM-WELLS [J].

BRASIL, MJSP ;

NAHORY, RE ;

TAMARGO, MC ;

SCHWARZ, SA .

APPLIED PHYSICS LETTERS, 1993, 63 (19) :2688-2690

[7] GROWTH OF INGAAS/INP OPTICAL MODULATOR STRUCTURES BY CHEMICAL BEAM EPITAXY [J].

CHIU, TH ;

GOOSSEN, KW ;

WILLIAMS, MD ;

STORZ, FG .

APPLIED PHYSICS LETTERS, 1992, 60 (19) :2365-2367

[8] CHEMICAL BEAM EPITAXY AND STRUCTURAL-ANALYSIS OF INAS/INP STRAINED SINGLEQUANTUM AND MULTIQUANTUM-WELL HETEROSTRUCTURES [J].

FREUNDLICH, A ;

BENSAOULA, A ;

BENSAOULA, AH ;

ROSSIGNOL, V .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1993, 11 (04) :884-888

[9] STRUCTURAL AND CHEMICAL-PROPERTIES OF INAS LAYERS GROWN ON INP(100) SURFACES BY ARSENIC STABILIZATION [J].

HOLLINGER, G ;

GALLET, D ;

GENDRY, M ;

SANTINELLI, C ;

VIKTOROVITCH, P .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (04) :832-837

[10]

KELSO SM, 1983, J PHYSIQUE COLLOQ C, V10, P45