AS CAPTURE AND THE GROWTH OF ULTRATHIN INAS LAYERS ON INP

被引：15

作者：

ASPNES, DE

TAMARGO, MC

BRASIL, MJSP

机构：

[1] UNICAMP,IFGW,BR-13081 CAMPINAS,SP,BRAZIL

[2] CUNY CITY COLL,DEPT CHEM,NEW YORK,NY 10031

[3] BELLCORE,RED BANK,NJ 07701

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 24期

关键词：

D O I：

10.1063/1.111309

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Capture of As by (001) InP surfaces exposed to As fluxes under chemical beam epitaxy conditions is investigated by virtual-interface analysis of real-time kinetic ellipsometric data. Intentional growth of ultrathin InAs layers is readily followed. Arsenic accumulated in the absence of growth can be completely removed by exposure to P, showing that As-P exchange occurs only in the outermost layer.

引用

页码：3279 / 3281

页数：3

共 16 条

[11] INSITU INTERFACE CONTROL OF PSEUDOMORPHIC INAS/INP QUANTUM-WELL STRUCTURE GROWTH BY SURFACE PHOTOABSORPTION [J].

KOBAYASHI, Y ;

KOBAYASHI, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1992, 31 (12A) :3988-3994

[12] OPTIMIZATION OF INTERFACES IN ARSENIDE PHOSPHIDE COMPOUNDS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY [J].

MOY, AM ;

CHEN, AC ;

JACKSON, SL ;

LIU, X ;

CHENG, KY ;

STILLMAN, GE ;

BISHOP, SG .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (03) :826-829

[13]

STUDNA AA, 1988, J VAC SCI TECHNOL A, V7, P3291

[14]

TAMARGO MC, 1992, P MATER RES SOC, V263, P267

[15] EVIDENCE FOR INTRINSIC INTERFACIAL STRAIN IN LATTICE-MATCHED INXGA1-XAS/INP HETEROSTRUCTURES [J].

VANDENBERG, JM ;

MACRANDER, AT ;

HAMM, RA ;

PANISH, MB .

PHYSICAL REVIEW B, 1991, 44 (08) :3991-3994

[16] STRUCTURE OF GA0.47IN0.53AS EPITAXIAL LAYERS GROWN ON INP SUBSTRATES AT DIFFERENT TEMPERATURES [J].

ZAKHAROV, ND ;

LILIENTALWEBER, Z ;

SWIDER, W ;

BROWN, AS ;

METZGER, R .

APPLIED PHYSICS LETTERS, 1993, 63 (20) :2809-2811

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