OPTIMIZATION OF INTERFACES IN ARSENIDE PHOSPHIDE COMPOUNDS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

被引：13

作者：

MOY, AM ^{[1
]}

CHEN, AC ^{[1
]}

JACKSON, SL ^{[1
]}

LIU, X ^{[1
]}

CHENG, KY ^{[1
]}

STILLMAN, GE ^{[1
]}

BISHOP, SG ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 03期

关键词：

D O I：

10.1116/1.586756

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel source switching procedure in gas source molecular-beam epitaxy to achieve abrupt interfaces in lattice-matched InP/GaInAs has been demonstrated. In this process, a two-step gas source switching procedure was used at the InP-to-GaInAs interface and a single growth pause was employed at the GaInAs-to-InP interface. Gas source switching procedures were optimized through characterizing multiple quantum well samples using photoluminescence and double crystal x-ray diffraction measurements. Single quantum wells grown using the optimized switching procedure displayed the narrowest luminescence linewidth values compared to other documented samples grown by gas source molecular-beam epitaxy.

引用

页码：826 / 829

页数：4

共 8 条

[1] INVESTIGATIONS ON THE INTERFACE ABRUPTNESS IN CBE-GROWN INGAAS INP QW STRUCTURES [J].