Effects of deposition temperature on polycrystalline silicon films using plasma-enhanced chemical vapor deposition

The 200-nm-thick polycrystalline Si films were deposited by changing the deposition temperature (T-d = 150-750 degrees C) using plasma-enhanced chemical vapor deposition of monosilane-hydrogen mixtures.The structural and bonding properties were examined using techniques of Raman scattering, x-ray diffraction, infrared (IR) absorption, and electron spin resonance. Except for T-d at 150 and 650 degrees C, crystallization of the films was observed, and the occurrence of two IR absorption bands around 850 and 1000 cm-l and an increase in the density of Si dangling bonds were observed in the range of Td higher than 500 degrees C. These origins were discussed in connection with the mechanisms of disappearance of crystalline phases from the film at T-d = 650 degrees C. (C) 1998 American Institute of Physics.