ELECTRICAL-PROPERTIES AND ELECTRON-SPIN-RESONANCE OF UNDOPED MICROCRYSTALLINE SI WITH A PREFERENTIAL ORIENTATION

被引：10

作者：

HASEGAWA, S

KISHI, K

KURATA, Y

机构：

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1985年 / 52卷 / 02期

关键词：

D O I：

10.1080/01418638508244282

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：199 / 209

页数：11

共 21 条

[1]

DAVIS EA, 1973, AMORPHOUS SEMICONDUC, P450

[2] HYDROGEN CONTENT OF A-GE-H AND A-SI-H AS DETERMINED BY IR SPECTROSCOPY, GAS EVOLUTION AND NUCLEAR-REACTION TECHNIQUES [J].

FANG, CJ ;

GRUNTZ, KJ ;

LEY, L ;

CARDONA, M ;

DEMOND, FJ ;

MULLER, G ;

KALBITZER, S .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :255-260

[3] TEMPERATURE-DEPENDENT FORMATION OF MICROCRYSTAL AND AMORPHOUS-SILICON BY VACUUM EVAPORATION [J].

FANG, PH ;

BAI, PG ;

KINNIER, JH ;

HUAN, Z ;

SCHUBERT, CC .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :819-821

[4] LOW-TEMPERATURE CRYSTALLIZATION OF DOPED A-SI-H ALLOYS [J].

HAMASAKI, T ;

KURATA, H ;

HIROSE, M ;

OSAKA, Y .

APPLIED PHYSICS LETTERS, 1980, 37 (12) :1084-1086

[5] ELECTRON-SPIN-RESONANCE IN DOPED CVD AMORPHOUS-SILICON FILMS [J].

HASEGAWA, S ;

KASAJIMA, T ;

SHIMIZU, T .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1981, 43 (01) :149-156

[6] ELECTRON-SPIN-RESONANCE AND ELECTRICAL-PROPERTIES OF P-DOPED MICROCRYSTALLINE SI [J].

HASEGAWA, S ;

NARIKAWA, S ;

KURATA, Y .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1983, 48 (05) :431-447

[7]

HASEGAWA S, 1982, J APPL PHYS, V53, P5022, DOI 10.1063/1.331378

[8] DEPENDENCES OF ELECTRON-SPIN-RESONANCE AND ELECTRICAL-PROPERTIES ON P DOPING RATIO FOR MICROCRYSTALLINE SI [J].

HASEGAWA, S ;

NARIKAWA, S ;

KURATA, Y .

PHYSICA B & C, 1983, 117 (MAR) :914-916

[9] DOPING AND ANNEALING EFFECTS ON ESR IN CHEMICALLY VAPOR-DEPOSITED AMORPHOUS SILICON [J].

HASEGAWA, S ;

KASAJIMA, T ;

SHIMIZU, T .

SOLID STATE COMMUNICATIONS, 1979, 29 (01) :13-16

[10] HYDROGENATED CRYSTALLINE SILICON FABRICATED AT LOW-SUBSTRATE TEMPERATURES BY REACTIVE SPUTTERING IN HE-H2 ATMOSPHERE [J].

IMURA, T ;

MOGI, K ;

HIRAKI, A ;

NAKASHIMA, S ;

MITSUISHI, A .

SOLID STATE COMMUNICATIONS, 1981, 40 (02) :161-164

← 1 2 3 →