Influence of contact electrodes on leakage characteristics in ferroelectric thin films

被引:111
作者
Nagaraj, B [1 ]
Aggarwal, S [1 ]
Ramesh, R [1 ]
机构
[1] Univ Maryland, Dept Mat & Nucl Engn, College Pk, MD 20742 USA
关键词
D O I
10.1063/1.1371947
中图分类号
O59 [应用物理学];
学科分类号
摘要
Electrodes can impact the device performance of ferroelectric capacitors in several ways. The present controlled studies on Pb (Nb, Zr, Ti)O-3 with Pt, (La, Sr)CoO3 and SrRuO3 is a clear demonstration of the role of electrodes in impacting the leakage current mechanism of the ferroelectric capacitors and their reliability properties. The oxide electrode capacitors show predominantly nonblocking contact and good fatigue and imprint properties. Pt electrode capacitors show blocking contacts, long term leakage current relaxation, and poor fatigue and imprint properties. The nature of the temperature and voltage dependence of leakage current relaxation in Pt capacitors indicates trapping of charge carriers to be the cause for the observed relaxation. A good correlation between leakage current relaxation and the rate of polarization loss during fatigue and the similarity in their voltage and temperature dependence suggests trapping (of charged carriers/domains, respectively) as common to both phenomena. (C) 2001 American Institute of Physics.
引用
收藏
页码:375 / 382
页数:8
相关论文
共 40 条
[11]   High dielectric constant and tunability of epitaxial SrTiO3 thin film capacitors [J].
Fuchs, D ;
Schneider, CW ;
Schneider, R ;
Rietschel, H .
JOURNAL OF APPLIED PHYSICS, 1999, 85 (10) :7362-7369
[12]  
HELLWEGE KH, 1991, LANDOLTBORNSTEIN B, V28, P232
[13]   DIELECTRIC-RELAXATION OF (BA,SR)TIO3 THIN-FILMS [J].
HORIKAWA, T ;
MAKITA, T ;
KUROIWA, T ;
MIKAMI, N .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (9B) :5478-5482
[14]   Effects of oxidants on the deposition and dielectric properties of the SrTiO3 thin films prepared by liquid source metal-organic chemical vapor deposition (MOCVD) [J].
Hwang, CS ;
Kang, CS ;
Cho, HJ ;
Park, SO ;
Lee, BT ;
Kim, JW ;
Horii, H ;
Lee, SI ;
Lee, MY .
INTEGRATED FERROELECTRICS, 1996, 12 (2-4) :199-213
[15]   A comparative study on the electrical conduction mechanisms of (Ba0.5Sr0.5)TiO3 thin films on Pt and IrO2 electrodes [J].
Hwang, CS ;
Lee, BT ;
Kang, CS ;
Kim, JW ;
Lee, KH ;
Cho, HJ ;
Horii, H ;
Kim, WD ;
Lee, SI ;
Roh, YB ;
Lee, MY .
JOURNAL OF APPLIED PHYSICS, 1998, 83 (07) :3703-3713
[16]   EFFECT OF INTERFACES ON THE ELECTRICAL BEHAVIOR OF (PB0.72LA0.28)TIO3 THIN-FILMS [J].
LEE, JJ ;
ALLURI, P ;
DEY, SK .
APPLIED PHYSICS LETTERS, 1994, 65 (16) :2027-2029
[17]  
Lee JM, 1996, INTEGR FERROELECTR, V13, P371
[18]   Preparation of (Ba, Sr)TiO3 thin films with high pyroelectric coefficients at ambient temperatures [J].
Lee, JS ;
Park, JS ;
Kim, JS ;
Lee, JH ;
Lee, YH ;
Hahn, SR .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (5B) :L574-L576
[19]   Highly c-axis oriented Pb(Zr,Ti)O3 thin films grown on Ir electrode barrier and their electrical properties [J].
Lee, KB ;
Tirumala, S ;
Desu, SB .
APPLIED PHYSICS LETTERS, 1999, 74 (10) :1484-1486
[20]   CONDUCTION MECHANISMS IN BATIO3 THIN-FILMS [J].
LI, P ;
LU, TM .
PHYSICAL REVIEW B, 1991, 43 (17) :14261-14264