Evidence of the defect-induced ferromagnetism in Na and Co codoped ZnO

被引：50

作者：

Gu, Hao ^{[1
]}

Jiang, Yinzhu ^{[1
]}

Xu, Yongbing ^{[2
]}

Yan, Mi ^{[1
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Dept Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China

[2] Univ York, Dept Elect, York Lab Spintron & Nanodevices, York YO10 5DD, N Yorkshire, England

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 01期

基金：

中国国家自然科学基金;

关键词：

THIN-FILMS; DOPED ZNO; SEMICONDUCTORS; SPINTRONICS; TEMPERATURE; DESIGN; SYSTEM;

D O I：

10.1063/1.3533666

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of Na concentration on the room-temperature ferromagnetism in Na and Co codoped ZnO diluted magnetic semiconductor (DMSs) was investigated. The ferromagnetic state was found to be stable below 5% doping of Na due to the exchange interaction via electron trapped oxygen vacancies (F-center) coupled with the magnetic Co ions. With large Na doping of up to 10%, a sharp reduction in the magnetization was observed, showing that the oxygen vacancy mediated antiferromagnetic state becomes predominant. The observed correlation between the Na concentration, the carrier concentration, and the magnetization demonstrated the effect of the defect in controlling the ferromagnetism in the ZnO-based DMS system. (C) 2011 American Institute of Physics. [doi:10.1063/1.3533666]

引用

页数：3

共 23 条

[1] Extrinsic origin of ferromagnetism in ZnO and Zn0.9Co0.1O magnetic semiconductor films prepared by sol-gel technique [J].