Structure and photoluminescence properties of Fe-doped ZnO thin films

被引：127

作者：

Chen, A. J.

Wu, X. M. ^{[1
]}

Sha, Z. D.

Zhuge, L. J.

Meng, Y. D.

机构：

[1] Suzhou Univ, Dept Phys, Suzhou 215006, Peoples R China

[2] Suzhou Univ, Key Lab Thin Films Jiangsu, Suzhou 215006, Peoples R China

[3] Chinese Acad Sci, Inst Plasma Phys, Hefei 230031, Peoples R China

[4] Suzhou Univ, Anal & Testing Ctr, Suzhou 215006, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2006年 / 39卷 / 22期

关键词：

D O I：

10.1088/0022-3727/39/22/004

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Zn1-xFexO films were prepared by the radio-frequency (rf) magnetron sputtering technique on n-Si substrates with a composite target of a ceramic polycrystalline ZnO containing several Fe pieces on the surface. X-ray photoelectron spectroscopy study of the Zn1-xFexO films shows that Fe in the as-deposited film exists mainly in the form of Fe2+. And x-ray diffraction spectra show that all the films exhibited c-axis orientation. The room temperature photoluminescence (PL) properties of the Zn1-xFexO films were also discussed. Two obvious PL peaks appear at 378 nm and 414 nm, respectively. It is interesting that there is a tendency of redshift for the peak at 378 nm and that the PL intensity increases slightly for the peak at 414 nm as the Fe concentration increases. Discussions have been given to explain the different phenomena.

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页码：4762 / 4765

页数：4

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