Blue and ultraviolet cathodoluminescence from Mn-doped epitaxial ZnO thin films

被引:106
作者
Jin, ZW
Yoo, YZ
Sekiguchi, T
Chikyow, T
Ofuchi, H
Fujioka, H
Oshima, M
Koinuma, H
机构
[1] Natl Res Inst Mat Sci, Nanomat Lab, Nanodevice Res Grp, Tsukuba, Ibaraki 3050047, Japan
[2] Nagoya Univ, Grad Sch Engn, Dept Mat Sci & Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan
[3] Univ Tokyo, Grad Sch Engn, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan
[4] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
[5] Natl Inst Mat Sci, COMET, Tsukuba, Ibaraki 3050044, Japan
关键词
D O I
10.1063/1.1590430
中图分类号
O59 [应用物理学];
学科分类号
摘要
Combinatorial laser molecular-beam epitaxy method was employed to fabricate epitaxial Zn1-xMnxO thin films in a high throughput fashion. Local structures around Mn were investigated for these c-axis-oriented epitaxial films by fluorescence x-ray absorption fine structure measurements. It was shown that Mn substitutionally replaces Zn in Zn1-xMnxO (x< 0.22) films. Well-structured blue and ultraviolet cathodoluminescence peaks corresponding to the intra-d-shell transitions of Mn2+ were observed, especially for smaller x. The luminescence is quenched rapidly as x is increased. By comparing the relative absorption strength per mole Mn2+ with the statistical probability of isolated Mn2+, it was concluded that the quick decrement of isolated Mn2+ with increasing x is responsible for the severe suppression of the blue and ultraviolet luminescence. (C) 2003 American Institute of Physics.
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页码:39 / 41
页数:3
相关论文
共 14 条
[1]   SOLUBILITY OF TRANSITION METAL OXIDES IN ZINC OXIDE AND REFLECTANCE SPECTRA OF MN2+ AND FE2+ IN TETRAHEDRAL FIELDS [J].
BATES, CH ;
WHITE, WB ;
ROY, R .
JOURNAL OF INORGANIC & NUCLEAR CHEMISTRY, 1966, 28 (02) :397-&
[3]   An oxide-diluted magnetic semiconductor: Mn-doped ZnO [J].
Fukumura, T ;
Jin, ZW ;
Ohtomo, A ;
Koinuma, H ;
Kawasaki, M .
APPLIED PHYSICS LETTERS, 1999, 75 (21) :3366-3368
[4]  
FURDYNA JK, 1988, J APPL PHYS, V64, P29
[5]   High throughput fabrication of transition-metal-doped epitaxial ZnO thin films: A series of oxide-diluted magnetic semiconductors and their properties [J].
Jin, ZW ;
Fukumura, T ;
Kawasaki, M ;
Ando, K ;
Saito, H ;
Sekiguchi, T ;
Yoo, YZ ;
Murakami, M ;
Matsumoto, Y ;
Hasegawa, T ;
Koinuma, H .
APPLIED PHYSICS LETTERS, 2001, 78 (24) :3824-3826
[6]   Combinatorial laser MBE synthesis of 3d ion doped epitaxial ZnO thin films [J].
Jin, ZW ;
Murakami, M ;
Fukumura, T ;
Matsumoto, Y ;
Ohtomo, A ;
Kawasaki, M ;
Koinuma, H .
JOURNAL OF CRYSTAL GROWTH, 2000, 214 :55-58
[7]   INTERACTIONS OF REMOTE IMPURITY CENTERS IN PHOSPHORS [J].
LEVERENZ, HW ;
NORTH, DO .
PHYSICAL REVIEW, 1952, 85 (05) :930-931
[8]   POINT-DEFECTS AND LUMINESCENCE-CENTERS IN ZINC-OXIDE AND ZINC-OXIDE DOPED WITH MANGANESE [J].
LIU, M ;
KITAI, AH ;
MASCHER, P .
JOURNAL OF LUMINESCENCE, 1992, 54 (01) :35-42
[9]   Combinatorial laser molecular beam epitaxy (MBE) growth of Mg-Zn-O alloy for band gap engineering [J].
Matsumoto, Y ;
Murakami, M ;
Jin, ZW ;
Ohtomo, A ;
Lippmaa, M ;
Kawasaki, M ;
Koinuma, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (6AB) :L603-L605
[10]   COMPARISON OF CRYSTAL FIELDS AND OPTICAL SPECTRA OF CR2O3 AND RUBY [J].
MCCLURE, DS .
JOURNAL OF CHEMICAL PHYSICS, 1963, 38 (09) :2289-&