Reversible Electrical Reduction and Oxidation of Graphene Oxide

被引:152
作者
Ekiz, Okan Oner [1 ]
Urel, Mustafa [1 ]
Guner, Hasan [1 ]
Mizrak, Alpay Koray [1 ]
Dana, Aykutlu [1 ]
机构
[1] Bilkent Univ, UNAM Inst Mat Sci & Nanotechnol, TR-06800 Ankara, Turkey
关键词
graphene; graphene oxide; electrochemistry; electrochromism; electrostatic force microscopy; resistive switching; tip-induced oxidation; INDUCED LOCAL OXIDATION; GRAPHITE OXIDE; ELECTRONICS; TRANSISTORS; COMPOSITE; SILICON; SHEETS; GAS;
D O I
10.1021/nn1014215
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We demonstrate that graphene oxide can be reversibly reduced and oxidized using electrical stimulus. Controlled reduction and oxidation in two-terminal devices containing multilayer graphene oxide films are shown to result in switching between partially reduced graphene oxide and graphene, a process which modifies the electronic and optical properties. High-resolution tunneling current and electrostatic force imaging reveal that graphene oxide islands are formed on multilayer graphene, turning graphene into a self-assembled heterostructure random nanomesh. Charge storage and resistive switching behavior is observed in two-terminal devices made of multilayer graphene oxide films, correlated with electrochromic effects. Tip-induced reduction and oxidation are also demonstrated. Results are discussed in terms of thermodynamics of oxidation and reduction reactions.
引用
收藏
页码:2475 / 2482
页数:8
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