Pulsed laser deposited crystalline ultrathin indium tin oxide films and their conduction mechanisms

被引：31

作者：

Kwok, HS ^{[1
]}

Sun, XW

Kim, DH

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Clear Water Bay, Hong Kong, Peoples R China

[2] LG Elect, Elect Res Lab, Seoul, South Korea

来源：

THIN SOLID FILMS | 1998年 / 335卷 / 1-2期

关键词：

conductivity; indium tin oxide; laser ablation;

D O I：

10.1016/S0040-6090(98)00959-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Crystalline ultrathin indium tin oxide (ITO) films were deposited on yttrium stabilized zirconia (YSZ) substrates by pulsed laser deposition. An X-ray rocking curve as narrow as 0.08 degrees was obtained. The conductivity mechanism in these films was studied as a function of temperature down to 10 ii. It was found that the temperature dependence of the conductivity was substantially different between thin (> 10 nm) and ultrathin (< 10 nm) films. (C) 1998 Elsevier Science S.A. All rights reserved.

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收藏

页码：299 / 302

页数：4

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