Thermodynamic analysis of the MBE growth of GaInAsN

被引：36

作者：

Odnoblyudov, VA ^{[1
]}

Egorov, AY ^{[1
]}

Kovsh, AR ^{[1
]}

Zhukov, AE ^{[1
]}

Maleey, NA ^{[1
]}

Semenova, ES ^{[1
]}

Ustinov, VM ^{[1
]}

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2001年 / 16卷 / 10期

关键词：

D O I：

10.1088/0268-1242/16/10/304

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A thermodynamic approach to analysis of the growth of InGaAsN compounds by molecular beam epitaxy (MBE) is proposed. The developed thermodynamic model allows estimation of the mole fraction of nitrogen in the obtained alloys as a function of external growth parameters: element fluxes and growth temperature. The model predicts that the nitrogen incorporation is temperature-independent below 500 degreesC and markedly diminishes at higher growth temperatures. The incorporation of nitrogen is suppressed on raising the arsenic flux; the content of group III elements in the alloy affects the nitrogen incorporation only slightly. The results of simulation are compared with experimental data on MBE-grown InGaAsN alloys with small nitrogen content (< 3%).

引用

页码：831 / 835

页数：5

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