Formation of two-dimensional electron gas and the magnetotransport behavior of ZnMnO/ZnO heterostructure

被引：49

作者：

Edahiro, T ^{[1
]}

Fujimura, N ^{[1
]}

Ito, T ^{[1
]}

机构：

[1] Univ Osaka Prefecture, Sch Engn, Osaka 5998531, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 93卷 / 10期

关键词：

D O I：

10.1063/1.1558612

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZnO based heterostructure, which contains magnetic impurities in the barrier layer, is grown on c-cut sapphire substrate by pulsed laser deposition. The temperature dependence of the mobility of the Zn0.9Mn0.1O/ZnO heterostructure exhibits the suppression of ionized impurity scattering below 100 K. The carrier concentration and the mobility measured at 1.85 K are 4.0x10(12) l/cm(2) and 360 cm(2)/V s. Shubnikov-de Haas oscillations are clearly observed in longitudinal magnetoresistance above 3.7 T at the same temperature. These transport properties reveal that two-dimensional electron gas is successfully obtained at the Zn0.9Mn0.1O/ZnO interface. (C) 2003 American Institute of Physics.

引用

收藏

页码：7673 / 7675

页数：3

相关论文

共 12 条

[1] Magneto-optical properties of ZnO-based diluted magnetic semiconductors [J].

Ando, K ;

Saito, H ;

Jin, ZW ;

Fukumura, T ;

Kawasaki, M ;

Matsumoto, Y ;

Koinuma, H .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (11) :7284-7286

[2] Zener model description of ferromagnetism in zinc-blende magnetic semiconductors [J].

Dietl, T ;

Ohno, H ;

Matsukura, F ;

Cibert, J ;

Ferrand, D .

SCIENCE, 2000, 287 (5455) :1019-1022

[3] Spin-dependent perpendicular magnetotransport through a tunable ZnSe/Zn1-xMnxSe heterostructure:: A possible spin filter? [J].

Egues, JC .

PHYSICAL REVIEW LETTERS, 1998, 80 (20) :4578-4581

[4] Injection and detection of a spin-polarized current in a light-emitting diode [J].

Fiederling, R ;

Keim, M ;

Reuscher, G ;

Ossau, W ;

Schmidt, G ;

Waag, A ;

Molenkamp, LW .

NATURE, 1999, 402 (6763) :787-790

[5] Magnetic properties of mn-doped ZnO [J].

Fukumura, T ;

Jin, ZW ;

Kawasaki, M ;

Shono, T ;

Hasegawa, T ;

Koshihara, S ;

Koinuma, H .

APPLIED PHYSICS LETTERS, 2001, 78 (07) :958-960

[6] An oxide-diluted magnetic semiconductor: Mn-doped ZnO [J].

Fukumura, T ;

Jin, ZW ;

Ohtomo, A ;

Koinuma, H ;

Kawasaki, M .

APPLIED PHYSICS LETTERS, 1999, 75 (21) :3366-3368

[7]

FURDYNA JK, 1988, J APPL PHYS, V64, P29

[8] FE3+ CENTER IN ZNO [J].

HEITZ, R ;

HOFFMANN, A ;

BROSER, I .

PHYSICAL REVIEW B, 1992, 45 (16) :8977-8988

[9] Residual native shallow donor in ZnO [J].

Look, DC ;

Hemsky, JW ;

Sizelove, JR .

PHYSICAL REVIEW LETTERS, 1999, 82 (12) :2552-2555

[10] Large magnetoresistance effect due to spin injection into a nonmagnetic semiconductor [J].

Schmidt, G ;

Richter, G ;

Grabs, P ;

Gould, C ;

Ferrand, D ;

Molenkamp, LW .

PHYSICAL REVIEW LETTERS, 2001, 87 (22) :227203-227203