Effects of back-channel etching on the performance of a-Si:H thin-film transistors

被引：8

作者：

Ando, M ^{[1
]}

Wakagi, M ^{[1
]}

Minemura, T ^{[1
]}

机构：

[1] Hitachi Ltd, Hitachi Res Lab, Hitachi, Ibaraki 3191292, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 07期

关键词：

amorphous silicon; thin-film transistor; field effect mobility; ellipsometry;

D O I：

10.1143/JJAP.37.3904

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thickness of the a-Si:H layer in the back-channel etched thin film transistor (TFT) was successfully reduced to less than 100 nm, with an accompanying increase in the field effect mobility. The thinning was realized by reducing surface defects of the a-Si:H layer generated in the hack-channel overetching step. The relationships between the TFT performance and surface defects, analyzed by spectroscopic ellipsometry, were investigated as a function of a-Si:H thickness and back-channel etching depth.

引用

页码：3904 / 3909

页数：6

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