Core-level spectroscopy of hydrocarbons adsorbed on Si(100)-(2X1): A systematic comparison

被引:44
作者
Fink, A
Widdra, W [1 ]
Wurth, W
Keller, C
Stichler, M
Achleitner, A
Comelli, G
Lizzit, S
Baraldi, A
Menzel, D
机构
[1] Tech Univ Munich, Phys Dept E20, D-85747 Garching, Germany
[2] TASC INFM Lab, I-34012 Trieste, Italy
[3] Univ Trieste, Dipartmento Fis, I-34127 Trieste, Italy
[4] ELETTRA, Sincrotrone Trieste, I-34012 Trieste, Italy
关键词
D O I
10.1103/PhysRevB.64.045308
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Adsorbate and substrate core-level binding energies for adsorption layers of six unsaturated hydrocarbons (C2H2. C2H4, C3H4, C4H6, C6D6 (C6H6), and 1,2-C2H2Cl2) on the Si(100)-(2x1) surface have been determined by high-resolution x-ray photoemission spectroscopy; results for the clean and the (2x1)-H covered surface have been obtained for comparison. Remarkable differences in the Si 2p and C 1s surface core-level shifts for the various adsorbates are found. which range from 327 to -169 meV and from 1220 to -260 meV, respectively. Both initial- and final-state effects are necessary to explain the strong but unsystematic variations of the observed shifts. Additionally, from a comparison of the C Is intensities the absolute saturation coverages are determined to be 0.87, 0.84, 1.15, 0.79, 0.36. and 0.44 molecules per unit cell of the clean surface for C2H2, C2H4, C3H4, C4H6, C6D6, and 1,2-C2H2Cl2, respectively.
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页数:9
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共 42 条
[1]   The dimers stay intact: a quantitative photoelectron study of the adsorption system Si{100}(2x1)-C2H4 [J].
Baumgaertel, P. ;
Lindsay, R. ;
Schaff, O. ;
Giessel, T. ;
Terborg, R. ;
Hoeft, J. T. ;
Polcik, M. ;
Bradshaw, A. M. ;
Carbone, M. ;
Piancastelli, M. N. ;
Zanoni, R. ;
Toomes, R. L. ;
Woodruff, D. P. .
NEW JOURNAL OF PHYSICS, 1999, 1 :20.1-20.15
[2]   Structure determination of the (√3 x √3) R30° boron phase on the Si(111) surface using photoelectron diffraction [J].
Baumgärtel, P ;
Paggel, JJ ;
Hasselblatt, M ;
Horn, K ;
Fernandez, V ;
Schaff, O ;
Weaver, JH ;
Bradshaw, AM ;
Woodruff, DP ;
Rotenberg, E ;
Denlinger, J .
PHYSICAL REVIEW B, 1999, 59 (20) :13014-13019
[3]  
BEAN JC, 1988, HIGH SPEED SUPERCOND
[4]   SiC formation by reaction of Si(001) with acetylene: Electronic structure and growth mode [J].
Dufour, G ;
Rochet, F ;
Stedile, FC ;
Poncey, C ;
DeCrescenzi, M ;
Gunnella, R ;
Froment, M .
PHYSICAL REVIEW B, 1997, 56 (07) :4266-4282
[5]  
FINK A, 2001, THESIS TU MUNCHEN
[6]  
FINK A, UNPUB
[7]   Electronic structure of benzene adsorbed on single-domain Si(001)-(2x1):: A combined experimental and theoretical study [J].
Gokhale, S ;
Trischberger, P ;
Menzel, D ;
Widdra, W ;
Dröge, H ;
Steinrück, HP ;
Birkenheuer, U ;
Gutdeutsch, U ;
Rösch, N .
JOURNAL OF CHEMICAL PHYSICS, 1998, 108 (13) :5554-5564
[8]   Silicon bonding for ultrahigh vaccuum surface science studies [J].
Gokhale, S ;
Fink, A ;
Trischberger, P ;
Eberle, K ;
Widdra, W .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2001, 19 (02) :706-708
[9]   Core-level broadening mechanisms at silicon surfaces [J].
Grupp, C ;
Taleb-Ibrahimi, A .
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1999, 101 :309-313
[10]   CARBON K-SHELL ELECTRON-ENERGY LOSS SPECTRA OF 1-BUTENE AND 2-BUTENE, TRANS-1,3-BUTADIENE, AND PERFLUORO-2-BUTENE - CARBON CARBON BOND LENGTHS FROM CONTINUUM SHAPE RESONANCES [J].
HITCHCOCK, AP ;
BEAULIEU, S ;
STEEL, T ;
STOHR, J ;
SETTE, F .
JOURNAL OF CHEMICAL PHYSICS, 1984, 80 (09) :3927-3935