Fabrication and characterization of InGaP/GaAs heterojunction bipolar transistors on GOI substrates

被引：17

作者：

Thomas, SG ^{[1
]}

Johnson, ES

Tracy, C

Maniar, P

Li, XL

Roof, B

Hartmann, Q

Ahmari, DA

机构：

[1] Motorola Inc, Embeddes Syst & Phys Sci Lab, Motorola Labs, Tempe, AZ 85284 USA

[2] Freescale Semicond, Adv Prod Res & Dev Lab, Tempe, AZ 85284 USA

[3] Epiworks Inc, Champaign, IL 61822 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2005年 / 26卷 / 07期

关键词：

GaAs; germanium; germanium-on-insulator (GOI); heterojunction bipolar transistor (HBT); InGaP;

D O I：

10.1109/LED.2005.851132

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we report the first demonstration of InGaP/GaAs heterojunction bipolar transistors (HBTs) on germanium-on-insulator (GOI) substrates. We have performed physical characterization of the epitaxial layers to verify the high quality of the III-V epitaxial material grown on the GOI substrates and performed dc characterization of large-area InGaP/GaAs HBTs fabricated on the substrates. The InGaP/GaAs HBTs realized on GOI substrates were compared with identical devices grown on bulk germanium substrates and similar devices on semi-insulating GaAs substrates.

引用

页码：438 / 440

页数：3

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