The structure and optoelectronic properties of dislocations in GaN

This paper reviews the structure of threading dislocations, nanopipes and inversion domains in (0001) GaN films grown by metal-organic chemical vapour deposition. A new mechanism for generation of misfit dislocations in epitaxial laterally overgrown (ELOG) GaN and in AlGaN/GaN interfaces is described. Recent cathodoluminescence studies in the scanning electron microscope are described, showing that individual threading defects act as non-radiative recombination centres in ELOG GaN and in InGaN quantum wells in GaN.