Temperature-dependent unstable homoepitaxy on vicinal GaAs(110) surfaces

被引：41

作者：

Tejedor, P ^{[1
]}

Allegretti, FE

Smilauer, P

Joyce, BA

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Semicond Mat IRC, London SW72AB, England

[2] Inst Phys, Praha 16200 6, Czech Republic

[3] CSIC, Inst Ciencia Mat, E-28049 Madrid, Spain

来源：

SURFACE SCIENCE | 1998年 / 407卷 / 1-3期

基金：

英国工程与自然科学研究理事会;

关键词：

atomic force microscopy; epitaxy; gallium arsenide; molecular beam epitaxy; morphological instabilities; surface diffusion; vicinal single crystal surfaces;

D O I：

10.1016/S0039-6028(98)00149-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The surface morphology of GaAs thin films grown by molecular beam epitaxy on (110) substrates misoriented towards (111)A is studied using atomic force microscopy in a wide range of growth temperatures. Two regimes of unstable growth with distinct growth morphologies are identified. Al substrate temperatures between 450 and 500 degrees C, macrosteps are created with step edges oriented along [110] or [1 (1) over bar 2]. Above 550 degrees C, GaAs(IIO) vicinal surfaces become unstable towards transverse meandering, and a ripple pattern morphology with ridges running along the [001] direction is formed. We attribute the two types of growth instabilities observed to differences in attachment kinetics of adatoms to surface steps at different As surface coverages. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：82 / 89

页数：8

共 20 条

[1] MORPHOLOGICAL INSTABILITY OF A TERRACE EDGE DURING STEP-FLOW GROWTH [J].

BALES, GS ;

ZANGWILL, A .

PHYSICAL REVIEW B, 1990, 41 (09) :5500-5508

[2] THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES [J].

BURTON, WK ;

CABRERA, N ;

FRANK, FC .

PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 243 (866) :299-358

[3] STEP-FLOW GROWTH ON STRAINED SURFACES - (AL,GA)SB TILTED SUPERLATTICES [J].

CHALMERS, SA ;

KROEMER, H ;

GOSSARD, AC .

APPLIED PHYSICS LETTERS, 1990, 57 (17) :1751-1753

[4] EFFECT OF SUBSTRATE TILTING ON MOLECULAR-BEAM EPITAXIAL GROWN ALGAAS/GAAS LASERS HAVING VERY LOW THRESHOLD CURRENT DENSITIES [J].

CHEN, HZ ;

GHAFFARI, A ;

MORKOC, H ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1987, 51 (25) :2094-2096

[5] ATOMIC VIEW OF SURFACE SELF-DIFFUSION - TUNGSTEN ON TUNGSTEN [J].

EHRLICH, G ;

HUDDA, FG .

JOURNAL OF CHEMICAL PHYSICS, 1966, 44 (03) :1039-&

[6] (ALAS)1/2(GAAS)1/2 FRACTIONAL-LAYER SUPERLATTICES GROWN ON (001) VICINAL GAAS SUBSTRATES BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION [J].

FUKUI, T ;

SAITO, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04) :1373-1377

[7] MORPHOLOGICAL INSTABILITIES ON EXACTLY ORIENTED AND ON VICINAL GAAS(001) SURFACES DURING MOLECULAR-BEAM EPITIXY [J].

HEY, R ;

WASSERMEIER, M ;

BEHREND, J ;

DAWERITZ, L ;

PLOOG, K ;

RAIDT, H .

JOURNAL OF CRYSTAL GROWTH, 1995, 154 (1-2) :1-9

[8] SILICON COMPENSATION AND SCATTERING MECHANISMS IN 2-DIMENSIONAL ELECTRON GASES ON (110)GAAS [J].

HOLLAND, MC ;

KEAN, AH ;

STANLEY, CR .

JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) :455-459

[9] THE NATURE OF ISLAND FORMATION IN THE HOMOEPITAXIAL GROWTH OF GAAS(110) [J].

HOLMES, DM ;

BELK, JG ;

SUDIJONO, JL ;

NEAVE, JH ;

JONES, TS ;

JOYCE, BA .

SURFACE SCIENCE, 1995, 341 (1-2) :133-141

[10]

HOLMES DM, IN PRESS J CRYSTAL G

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