SILICON COMPENSATION AND SCATTERING MECHANISMS IN 2-DIMENSIONAL ELECTRON GASES ON (110)GAAS

被引：18

作者：

HOLLAND, MC

KEAN, AH

STANLEY, CR

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 150卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)00932-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A study of the MBE growth of (001) and (110) (Al,Ga)As is reported, and the efficiency of Si as an n-type dopant in (11O)GaAs is accessed. A 40 nm spacer two-dimensional electron gas (2DEG) structure grown on (11O)GaAs gives a mobility of 540,000 cm(2) V-1 s(-1) at 4 K after illumination. The dominant scattering mechanisms in 2DEGs on (110) and (001)GaAs grown under the separate optimum growth conditions for the two orientations are compared.

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页码：455 / 459

页数：5

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