Magnetron reactive ion etching of group III-nitride ternary alloys

被引：11

作者：

McLane, GF ^{[1
]}

Monahan, T ^{[1
]}

Eckart, DW ^{[1
]}

Pearton, SJ ^{[1
]}

Abernathy, CR ^{[1
]}

机构：

[1] UNIV FLORIDA, DEPT MAT SCI & ENGN, GAINESVILLE, FL 32611 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1996年 / 14卷 / 03期

关键词：

D O I：

10.1116/1.580131

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Magnetron reactive ion etching of the group III-nitride ternary alloys InxGa1-xN and InxAl1-xN was investigated in BCl3 plasmas and also in SF6/BCl3, H-2/BCl3, and Ar/BCl3 gas mixtures. Etch rates were determined as a function of cathode power density, flow rate, pressure, and gas composition. Etch rates were achieved that were four to six times greater than previously reported for these materials, and at low cathode bias voltages (<100 V). The addition of H-2 and Ar to concentrations of 60% in BCl3 increased In0.25Ga0.75N etch rates by 35% and 90%, respectively. Auger electron spectroscopy measurements on In0.75Al0.25N showed a reduction in the surface In/Al ratio upon etching, but essentially no change in the surface composition of etched In0.25Ga0.75N. (C) 1996 American Vacuum Society.

引用

页码：1046 / 1049

页数：4

共 16 条

[1] GROWTH OF III-V MATERIALS BY METALORGANIC MOLECULAR-BEAM EPITAXY [J].

ABERNATHY, CR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1993, 11 (04) :869-875

[2] GROWTH OF INN FOR OHMIC CONTACT FORMATION BY ELECTRON-CYCLOTRON RESONANCE METALORGANIC MOLECULAR-BEAM EPITAXY [J].

ABERNATHY, CR ;

PEARTON, SJ ;

REN, F ;

WISK, PW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (02) :179-182

[3] REACTIVE ION ETCHING OF GALLIUM NITRIDE IN SILICON TETRACHLORIDE PLASMAS [J].

ADESIDA, I ;

MAHAJAN, A ;

ANDIDEH, E ;

KHAN, MA ;

OLSEN, DT ;

KUZNIA, JN .

APPLIED PHYSICS LETTERS, 1993, 63 (20) :2777-2779

[4] MAGNETRON ION ETCHING WITH CF4 BASED PLASMAS - EFFECTS OF MAGNETIC-FIELD ON PLASMA CHEMISTRY [J].

BRIGHT, AA ;

KAUSHIK, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (03) :542-546

[5] REACTIVE ION ETCHING OF INDIUM COMPOUNDS USING IODINE CONTAINING PLASMAS [J].

FLANDERS, DC ;

PRESSMAN, LD ;

PINELLI, G .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (06) :1990-1993

[6]

KHAN MA, 1993, APPL PHYS LETT, V63, P1214, DOI 10.1063/1.109775

[7] MICROWAVE PERFORMANCE OF A 0.25 MU-M GATE ALGAN/GAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR [J].

KHAN, MA ;

KUZNIA, JN ;

OLSON, DT ;

SCHAFF, WJ ;

BURM, JW ;

SHUR, MS .

APPLIED PHYSICS LETTERS, 1994, 65 (09) :1121-1123

[8] HIGH DISLOCATION DENSITIES IN HIGH-EFFICIENCY GAN-BASED LIGHT-EMITTING-DIODES [J].

LESTER, SD ;

PONCE, FA ;

CRAFORD, MG ;

STEIGERWALD, DA .

APPLIED PHYSICS LETTERS, 1995, 66 (10) :1249-1251

[9] MAGNETRON REACTIVE ION ETCHING OF ALN AND INN IN BCL3 PLASMAS [J].

MCLANE, GF ;

CASAS, L ;

LAREAU, RT ;

ECKART, DW ;

VARTULI, CB ;

PEARTON, SJ ;

ABERNATHY, CR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1995, 13 (03) :724-726

[10] MAGNETRON-ENHANCED REACTIVE ION ETCHING OF GAAS AND ALGAAS USING CH4/H2/AR [J].

MCLANE, GF ;

COLE, MW ;

ECKART, DW ;

COOKE, P ;

MOERKIRK, R ;

MEYYAPPAN, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1993, 11 (04) :1753-1757

← 1 2 →