MAGNETRON-ENHANCED REACTIVE ION ETCHING OF GAAS AND ALGAAS USING CH4/H2/AR

被引：20

作者：

MCLANE, GF ^{[1
]}

COLE, MW ^{[1
]}

ECKART, DW ^{[1
]}

COOKE, P ^{[1
]}

MOERKIRK, R ^{[1
]}

MEYYAPPAN, M ^{[1
]}

机构：

[1] SCI RES ASSOCIATES INC,GLASTONBURY,CT 06033

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1993年 / 11卷 / 04期

关键词：

D O I：

10.1116/1.578419

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Magnetron reactive ion etching of GaAs and AlGaAs has been investigated in CH4/H-2/Ar gas mixtures. Etch rate was determined as a function of gas composition, power density (0.4-1.0 W/cm2), pressure (6-25 mTorr), and total flow rate (20-40 sccm). Scanning electron microscope measurements revealed that anisotropic etching characteristics and smooth etched surfaces can be obtained. Transmission electron microscope measurements showed that the addition of Ar to the gas mixture enhanced surface smoothness, but increased the etch-induced defect depth and density. Hydrogen passivation effects of etched and rapid thermal annealed GaAs were studied for two anneal temperatures (300, 400-degrees-C).

引用

页码：1753 / 1757

页数：5

共 18 条

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