Spatial variation of luminescence in thick GaN films

被引：16

作者：

Bertram, F ^{[1
]}

Srinivasan, S

Ponce, FA

Riemann, T

Christen, J

Molnar, RJ

机构：

[1] Arizona State Univ, Dept Phys & Astron, Tempe, AZ 85287 USA

[2] Univ Magdeburg, Lincoln Lab, D-39016 Magdeburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 09期

关键词：

D O I：

10.1063/1.1350594

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The spatial variation of the optical properties of hydride vapor-phase epitaxial GaN layers of various thickness has been studied using scanning cathodoluminescence microscopy. A strong improvement of these properties with film thickness is observed in plan view. Cross-sectional studies show a strong redshift of the luminescence in the vicinity of the substrate within a typical thickness of about 2 mum, reflecting a high local impurity content. Above this initial growth region, a strong blueshift is observed up to the energy of fully relaxed high-purity GaN, indicating vertical strain relaxation as well as depletion of residual donors. This is accompanied by a sharp increase in the lateral spectral homogeneity, indicative of a significant improvement in crystalline quality. (C) 2001 American Institute of Physics.

引用

页码：1222 / 1224

页数：3

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