A low-voltage and low-power RF MEMS series, and shunt switches actuated by combination of electromagnetic and electrostatic forces

被引:82
作者
Cho, IJ [1 ]
Song, T [1 ]
Baek, SH [1 ]
Yoon, E [1 ]
机构
[1] Korea Adv Inst Sci & Technol, Dept Elect Engn & Comp Sci, Div Elect Engn, Taejon 305701, South Korea
关键词
electromagnetic actuation; electrostatic actuation; RF microelectromechanical systems (MEMS) switch; series type; shunt type;
D O I
10.1109/TMTT.2005.850406
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper reports new RF microelectromechanical systems (MEMS) switches actuated by the combination of electromagnetic and electrostatic forces for low-voltage and low-power operation. The proposed RF MEMS switches have utilized the proper combination of two actuation mechanisms: taking advantage of the large actuation force from electromagnetic actuation for initial movement and the low-power feature from electrostatic actuation for holding the actuator position. Both series- and shunt-type switches have been implemented using the proposed actuation mechanism. From the fabricated switches, feasibility of operation has been successfully demonstrated. The fabricated switches can be operated within several hundred microseconds. In the series-type switch, the isolation has been measured as -34 dB and insertion loss as -0.37 dB at 20 GHz. In the shunt type switch, the isolation is - 20.7 dB and insertion loss is - 0.85 dB at 19.5 GHz. The proposed RF MEMS switches are mechanically robust and the combination of electromagnetic and electrostatic actuations makes it possible to achieve excellent switching characteristics at low power and low voltage below 5 V.
引用
收藏
页码:2450 / 2457
页数:8
相关论文
共 19 条
[1]   RF-MEMS switches for reconfigurable integrated circuits [J].
Brown, ER .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1998, 46 (11) :1868-1880
[2]   A low-voltage two-axis electromagnetically actuated micromirror with bulk silicon mirror plates and torsion bars [J].
Cho, IJ ;
Yun, KS ;
Lee, HK ;
Yoon, JB ;
Yoon, E .
FIFTEENTH IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS, TECHNICAL DIGEST, 2002, :540-543
[3]  
CHO IJ, 2004, P 34 EUR MICR C AMST, P1445
[4]  
Hah D, 2000, IEEE MTT S INT MICR, P157, DOI 10.1109/MWSYM.2000.860913
[5]   Contact physics of gold microcontacts for MEMS switches [J].
Hyman, D ;
Mehregany, M .
IEEE TRANSACTIONS ON COMPONENTS AND PACKAGING TECHNOLOGIES, 1999, 22 (03) :357-364
[6]  
Kawakyu K, 1996, IEEE MTT-S, P647, DOI 10.1109/MWSYM.1996.511016
[7]  
Ke LW, 1996, MICROW OPT TECHN LET, V13, P47, DOI 10.1002/(SICI)1098-2760(199609)13:1<47::AID-MOP16>3.0.CO
[8]  
2-2
[9]   High-isolation CPW MEMS shunt switches - Part 1: Modeling [J].
Muldavin, JB ;
Rebeiz, GM .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2000, 48 (06) :1045-1052
[10]  
MULDAVIN JB, 2000, P 30 EUR MICR C PAR, P512