Reliability of 4Mbit MRAM

被引：10

作者：

Åkerman, J ^{[1
]}

Brown, P ^{[1
]}

Gajewski, D ^{[1
]}

Griswold, M ^{[1
]}

Janesky, J ^{[1
]}

Martin, M ^{[1
]}

Mekonnen, H ^{[1
]}

Nahas, JJ ^{[1
]}

Pietambaram, S ^{[1
]}

Slaughter, JM ^{[1
]}

Tehrani, S ^{[1
]}

机构：

[1] Freescale Semiconductor, Chandler, AZ 85224 USA

来源：

2005 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 43RD ANNUAL | 2005年

关键词：

D O I：

10.1109/RELPHY.2005.1493078

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：163 / 167

页数：5

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