Temperature dependence of ZnO thin films grown on Si substrate

被引：11

作者：

Kim, Y. Y. ^{[1
]}

Ahn, C. H. ^{[1
]}

Kang, S. W. ^{[1
]}

Kong, B. H. ^{[1
]}

Mohanta, S. K. ^{[1
]}

Cho, H. K. ^{[1
]}

Lee, J. Y. ^{[2
]}

Kim, H. S. ^{[2
]}

机构：

[1] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, Gyeonggi Do, South Korea

[2] Korea Maritime Univ, Dept Semicond Phys, Pusan 606791, South Korea

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2008年 / 19卷 / 8-9期

关键词：

D O I：

10.1007/s10854-007-9402-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The structural and optical properties of ZnO thin films grown on Si substrates were investigated for different growth temperatures in the range of 520-720 degrees C. X-ray diffraction investigations revealed the preferred c-axis oriented growth of ZnO thin films, which was further confirmed by the presence of ZnO (0002) diffraction spots with arc shape. The increase in growth temperature transformed surface morphology from pyramidal with columnar grains to relatively flat surface with increased grain size. In addition, the increased growth temperature caused redshift and intensity enhancement of band-edge emission of the ZnO, which were related to the increase in tensile strain and the grain size, respectively.

引用

页码：749 / 754

页数：6

共 18 条

[1] ZnO diode fabricated by excimer-laser doping [J].

Aoki, T ;

Hatanaka, Y ;

Look, DC .

APPLIED PHYSICS LETTERS, 2000, 76 (22) :3257-3258

[2] Low-temperature deposition of ZnO thin films on PET and glass substrates by DC-sputtering technique [J].

Banerjee, AN ;

Ghosh, CK ;

Chattopadhyay, KK ;

Minoura, H ;

Sarkar, AK ;

Akiba, A ;

Kamiya, A ;

Endo, T .

THIN SOLID FILMS, 2006, 496 (01) :112-116

[3] Epitaxial growth of ZnO nanowires on a- and c-plane sapphire [J].

Baxter, JB ;

Aydil, ES .

JOURNAL OF CRYSTAL GROWTH, 2005, 274 (3-4) :407-411

[4] Temperature-dependent shifts of three emission bands for ZnO nanoneedle arrays [J].

Cao, BQ ;

Cai, WP ;

Zeng, HB .

APPLIED PHYSICS LETTERS, 2006, 88 (16)

[5] ZnO as a novel photonic material for the UV region [J].

Chen, YF ;

Bagnall, D ;

Yao, TF .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 75 (2-3) :190-198

[6] CONTROL OF PREFERRED ORIENTATION FOR ZNOX FILMS - CONTROL OF SELF-TEXTURE [J].

FUJIMURA, N ;

NISHIHARA, T ;

GOTO, S ;

XU, JF ;

ITO, T .

JOURNAL OF CRYSTAL GROWTH, 1993, 130 (1-2) :269-279

[7] Origin of defect-related green emission from ZnO nanoparticles: effect of surface modification [J].

Gong, Yinyan ;

Andelman, Tamar ;

Neumark, Gertrude F. ;

O'Brien, Stephen ;

Kuskovsky, Igor L. .

NANOSCALE RESEARCH LETTERS, 2007, 2 (06) :297-302

[8] High-quality ZnO films prepared on Si wafers by low-pressure MO-CVD [J].

Haga, K ;

Suzuki, T ;

Kashiwaba, Y ;

Watanabe, H ;

Zhang, BP ;

Segawa, Y .

THIN SOLID FILMS, 2003, 433 (1-2) :131-134

[9] Temperature dependent exciton photoluminescence of bulk ZnO [J].

Hamby, DW ;

Lucca, DA ;

Klopfstein, MJ ;

Cantwell, G .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (06) :3214-3217

[10] Ultraviolet emission and microstructural evolution in pulsed-laser-deposited ZnO films [J].

Im, S ;

Jin, BJ ;

Yi, S .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (09) :4558-4561

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