Dynamics and reactivity of positively charged muonium in heavily doped Si:B and comparisons with hydrogen

被引：14

作者：

Mansour, A. I. ^{[1
]}

Salman, Z. ^{[2
,3
]}

Chow, K. H. ^{[1
]}

Fan, I. ^{[1
]}

King, P. J. C. ^{[3
]}

Hitti, B. ^{[4
]}

Jung, J. ^{[1
]}

Cottrell, S. P. ^{[3
]}

机构：

[1] Univ Alberta, Dept Phys, Edmonton, AB T6G 2G7, Canada

[2] Univ Oxford, Dept Phys, Clarendon Lab, Oxford OX1 3PU, England

[3] Rutherford Appleton Lab, ISIS Facil, Didcot OX11 0QX, Oxon, England

[4] TRIUMF, Vancouver, BC V6T 2A3, Canada

来源：

PHYSICAL REVIEW LETTERS | 2008年 / 100卷 / 25期

关键词：

D O I：

10.1103/PhysRevLett.100.257602

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The detailed dynamics of the positively charged muonium (Mu(+)) in heavily doped p-type Si:B is reported. Below 200 K, Mu(+) is static and isolated, and is located in a stretched Si-Si bond. Above approximate to 200 K, Mu(+) diffuses incoherently. At temperatures higher than 300 K, the Mu(+)-B(-) complex is formed while above 520 K, it starts to dissociate. There is significant enhancement of the diffusion of Mu(+) in Si compared to H(+) and D(+)-this is attributed to its smaller mass.

引用

页数：4

共 27 条

[1] VIBRATIONAL FREQUENCIES OF SI-P-H COMPLEXES IN CRYSTALLINE SILICON - A THEORETICAL-STUDY [J].

BONAPASTA, AA ;

GIANNOZZI, P ;

CAPIZZI, M .

PHYSICAL REVIEW B, 1990, 42 (05) :3175-3178

[2] Structure, kinetics, and passivation of hydrogen-acceptor complexes in gallium arsenide: A theoretical study [J].

Bonapasta, AA ;

Capizzi, M ;

Giannozzi, P .

PHYSICAL REVIEW B, 1998, 57 (20) :12923-12931

[3] NON-ARRHENIUS REORIENTATION KINETICS FOR THE B-H COMPLEX IN SI - EVIDENCE FOR THERMALLY ASSISTED TUNNELING [J].

CHENG, YM ;

STAVOLA, M .

PHYSICAL REVIEW LETTERS, 1994, 73 (25) :3419-3422

[4] Muonium analog of hydrogen passivation:: Observation of the Mu+-Zn- reaction in GaAs -: art. no. 216403 [J].

Chow, KH ;

Hitti, B ;

Kiefl, RF ;

Lichti, RL ;

Estle, TL .

PHYSICAL REVIEW LETTERS, 2001, 87 (21) :216403-1

[5] Diffusion and charge dynamics of negatively charged muonium in n-type GaAs [J].

Chow, KH ;

Hitti, B ;

Kiefl, RF ;

Dunsiger, SR ;

Lichti, RL ;

Estle, TL .

PHYSICAL REVIEW LETTERS, 1996, 76 (20) :3790-3793

[6] STRUCTURE OF NEGATIVELY CHARGED MUONIUM IN N-TYPE GAAS [J].

CHOW, KH ;

KIEFL, RF ;

MACFARLANE, WA ;

SCHNEIDER, JW ;

COOKE, DW ;

LEON, M ;

PACIOTTI, M ;

ESTLE, TL ;

HITTI, B ;

LICHTI, RL ;

COX, SFJ ;

SCHWAB, C .

PHYSICAL REVIEW B, 1995, 51 (20) :14762-14765

[7]

Chow KH, 1998, SEMICONDUCT SEMIMET, V51, P137

[8] The shallow-to-deep instability of hydrogen and muonium in II-VI and III-V semiconductors [J].

Cox, SFJ .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2003, 15 (46) :R1727-R1780

[9] QUANTUM THEORY OF DIFFUSION WITH APPLICATION TO LIGHT INTERSTITIALS IN METALS [J].

FLYNN, CP ;

STONEHAM, AM .

PHYSICAL REVIEW B, 1970, 1 (10) :3966-&

[10]

Gorelkinskii Yu. V., 1987, Soviet Technical Physics Letters, V13, P45

← 1 2 3 →