Oxidation of strained Si in a microwave electron cyclotron resonance plasma

被引：13

作者：

Bera, LK ^{[1
]}

Mukhopadhyay, M ^{[1
]}

Ray, SK ^{[1
]}

Nayak, DK ^{[1
]}

Usami, N ^{[1
]}

Shiraki, Y ^{[1
]}

Maiti, CK ^{[1
]}

机构：

[1] INDIAN INST TECHNOL,DEPT ELECT & ELECT COMMUN ENGN,KHARAGPUR 721302,W BENGAL,INDIA

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 02期

关键词：

D O I：

10.1063/1.118370

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electron cyclotron resonance plasma oxidation of strained Si on relaxed Si1-xGex buffer layers in O-2 ambient at room temperature is reported. The electrical properties of grown oxide have been characterized and compared with thermally grown oxides using a metal-oxide. semiconductor structure. At a low held, the accumulation of holes in the buried Si1-xGex layer, due to the type-II band offset, has been observed. The experimental results from thermally grown oxides have been compared with the simulation results obtained using a heterostructure Poisson solver. (C) 1997 American Institute of Physics.

引用

页码：217 / 219

页数：3

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