Effects of strain and alloying on the Hall scattering factor for holes in Si and Si1-xGex

被引：6

作者：

Dijkstra, JE ^{[1
]}

Wenckebach, WT ^{[1
]}

机构：

[1] Delft Univ Technol, Fac Appl Phys, NL-2600 GA Delft, Netherlands

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 85卷 / 03期

关键词：

D O I：

10.1063/1.369290

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The Hall factor for holes at T=300 K in strained Si and strained and relaxed Si1-xGex is calculated using two methods, a Monte Carlo method and a method based on the relaxation time approximation. The results of both methods agree very well. The Hall scattering factor is found to depend strongly on strain, varying from a value of approximate to 3 to approximate to 0.1. This is explained by the change in anisotropy of the valence band due to strain. Also the effect of alloying and alloy disorder scattering on the Hall factor in Si1-xGex is investigated. Alloying has strong effect on the scattering factor because it changes the anisotropy of the valence band. The effect of alloy disorder scattering is found to be negligible. (C) 1999 American Institute of Physics. [S0021-8979(99)08403-0].

引用

页码：1587 / 1590

页数：4

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