DIRECT MEASUREMENT OF THE HALL FACTOR FOR HOLES IN RELAXED SI1-XGEX (O-LESS-THAN-X-LESS-THAN-1)

被引：13

作者：

CHEN, YC

LI, SH

BHATTACHARYA, PK

SINGH, J

HINCKLEY, JM

机构：

[1] Department of Electrical Engineering and Computer Science, Solid-State Electronics Laboratory, University of Michigan, Ann Arbor

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 23期

关键词：

D O I：

10.1063/1.111363

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The Hall factor for holes in relaxed p-type Si1-xGex alloys has been determined from mobility measurements at magnetic fields up to 7 T at 290 K. Our data together with previously published values for Si and Ge suggest that r for holes in SiGe varies between 0.73 and 1.7 with a possible strong bowing.

引用

页码：3110 / 3111

页数：2

共 12 条

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